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NTD5865NL
N-Channel Power MOSFET
60 V, 46 A, 16 m W
Features
? Low Gate Charge
? Fast Switching
? High Current Capability
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free and are RoHS Compliant
V (BR)DSS
http://onsemi.com
R DS(on) MAX
I D MAX
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Gate ? to ? Source Voltage ? Continuous
V GS
Gate ? to ? Source Voltage
V GS
? Non ? Repetitive (t p < 10 m s)
Value
60
" 20
" 30
Unit
V
V
V
60 V
16 m W @ 10 V
19 m W @ 4.5 V
D
46 A
T C = 25 ° C
Continuous Drain
Current (R q JC )
Power Dissipation
(R q JC )
Pulsed Drain Current
T C = 25 ° C
Steady T C = 100 ° C
State
t p = 10 m s
I D
P D
I DM
46
33
71
203
A
W
A
G
S
N ? CHANNEL MOSFET
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
? 55 to
175
46
° C
A
4
4
I AS
27
A
1 2
3
3
CASE 369AA
(Surface Mount)
STYLE 2
Single Pulse Drain ? to ? Source (L = E AS 36 mJ
Avalanche Energy 0.1 mH)
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
2
DPAK
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Junction ? to ? Case (Drain) R q JC
Value
2.1
Unit
° C/W
& PIN ASSIGNMENT
4
4 Drain
Drain
Junction ? to ? Ambient ? Steady State (Note 1) R q JA 49
1. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Y = Year
WW = Work Week
5865NL = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 3
1
Publication Order Number:
NTD5865NL/D
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